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FD400R33KF2CNOSA1
FD400R33KF2CNOSA1
IGBT Modules FD400R33KF2CNOSA1
Infineon
FD400R33KF2CNOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
ECCN (US)3A228.c
PackagingTray
AutomotiveUnknown
Part StatusLTB
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)4800000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)660
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 660A 4800000mW Automotive Tray
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