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IGBT Modules FD600R12KF4NOSA1
Infineon
FD600R12KF4NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter Dual Collector
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)3900000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.7
Description
Trans IGBT Module N-CH 1200V 600A 3900000mW 7-Pin IHM130-2
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