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FD800R33KF2CKNOSA1
FD800R33KF2CKNOSA1
IGBT Modules FD800R33KF2CKNOSA1
Infineon
FD800R33KF2CKNOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
ECCN (US)3A228.c
PackagingTray
AutomotiveUnknown
Part StatusLTB
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)9600000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)1300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 1.3KA 9600000mW Automotive Tray
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