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FF1000R17IE4
FF1000R17IE4
IGBT Modules FF1000R17IE4
Infineon
FF1000R17IE4
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Diodes, Transistors and Thyristors
IGBT Modules
FF1000R17IE4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count12
AutomotiveNo
PCB changed12
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Package Width89
Package Height38
Package Length250
Supplier PackagePRIME3-1
Maximum Power Dissipation (mW)6250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1390
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 1.39KA 6250000mW 12-Pin PRIME3-1 Tray
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