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VS-ENQ030L120S
VS-ENQ030L120S
IGBT Modules VS-ENQ030L120S
Vishay
VS-ENQ030L120S
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count19
AutomotiveNo
TechnologyTrench
PCB changed19
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEMIPAK-1B PressFit
Standard Package NameEMIPAK-1B PressFit
Maximum Power Dissipation (mW)216000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)61
Maximum Gate Emitter Leakage Current (uA)0.2
Description
Trans IGBT Module N-CH 1200V 61A 216000mW 19-Pin EMIPAK-1B PressFit
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