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IGBT Modules FF50R12RT4HOSA1
Infineon
FF50R12RT4HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 7 |
| Automotive | No |
| PCB changed | 7 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 34 |
| Package Height | 28.8 |
| Package Length | 94 |
| Supplier Package | 34MM-1 |
| Maximum Power Dissipation (mW) | 285000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 50 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.85 |
| Description |
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