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FZ1200R33KF2CNOSA1
FZ1200R33KF2CNOSA1
IGBT Modules FZ1200R33KF2CNOSA1
Infineon
FZ1200R33KF2CNOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
ECCN (US)3A228C
PackagingTray
AutomotiveUnknown
Part StatusLTB
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Maximum Power Dissipation (mW)14500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)2000
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 2KA 14500000mW Automotive Tray
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