Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FZ1200R33KF2CNOSA1
FZ1200R33KF2CNOSA1
IGBT Modules FZ1200R33KF2CNOSA1
Infineon
FZ1200R33KF2CNOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
ECCN (US)3A228C
PackagingTray
AutomotiveUnknown
Part StatusLTB
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Maximum Power Dissipation (mW)14500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)2000
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 2KA 14500000mW Automotive Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13815
Manufacturer: Microchip Technology
Inventory: 0
$0.69541
Manufacturer: Microchip Technology
Inventory: 0
$0.21974
Manufacturer: STMicroelectronics
Inventory: 0
$0.43568
Manufacturer: Texas Instruments
Inventory: 3000
$3.36776
Manufacturer: Texas Instruments
Inventory: 0
$0.02555
Manufacturer: Texas Instruments
Inventory: 3000
$1.31986
Manufacturer: Texas Instruments
Inventory: 6000
$1.0644
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51252
Manufacturer: ADI
Inventory: 0
$1.40371