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IGBT Modules NXH350N100H4Q2F2S1G
onsemi
NXH350N100H4Q2F2S1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Automotive | No |
| Technology | Field Stop|Trench |
| Part Status | Active |
| Channel Type | N |
| Configuration | Quad |
| Maximum Power Dissipation (mW) | 592000@T 1|592000@T 4|731000@T 2|731000@T 3 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 1000 |
| Maximum Continuous Collector Current (A) | 303@T 1|303@T 4|298@T 2|298@T 3 |
| Maximum Gate Emitter Leakage Current (uA) | 2 |
| Typical Collector Emitter Saturation Voltage (V) | 1.63@T 1|1.63@T 4|1.75@T 2|1.75@T 3 |
| Description |
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