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FF600R12ME4
FF600R12ME4
IGBT Modules FF600R12ME4
Infineon
FF600R12ME4
--
Diodes, Transistors and Thyristors
IGBT Modules
FF600R12ME4.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count11
AutomotiveUnknown
PCB changed11
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Package Width62
Package Height17
Package Length152
Supplier PackageECONOD-3
Maximum Power Dissipation (mW)4050000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)995
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
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