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IGBT Modules FF600R17KF6CB2NOSA1
Infineon
FF600R17KF6CB2NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count10
AutomotiveNo
PCB changed10
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-1
Maximum Power Dissipation (mW)4800000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)975
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Module N-CH 1700V 975A 4800000mW 10-Pin IHM130-1
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