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IGBT Modules FF900R12IE4VBOSA1
Infineon
FF900R12IE4VBOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 10 |
| Automotive | Unknown |
| Technology | Trench|Field Stop |
| PCB changed | 10 |
| Part Status | NRND |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 89 |
| Package Height | 37.7 |
| Package Length | 172 |
| Supplier Package | PRIME2-1 |
| Maximum Power Dissipation (mW) | 5100000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 900 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Typical Collector Emitter Saturation Voltage (V) | 1.75 |
| Description |
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