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FF75R12YT3BOMA1
FF75R12YT3BOMA1
IGBT Modules FF75R12YT3BOMA1
Infineon
FF75R12YT3BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusNRND
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)345000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.8
Description
Trans IGBT Module N-CH 1200V 100A 345000mW Tray
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