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FF800R12KF4NOSA1
FF800R12KF4NOSA1
IGBT Modules FF800R12KF4NOSA1
Infineon
FF800R12KF4NOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count10
AutomotiveNo
PCB changed10
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)5000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)800
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.7
Description
Trans IGBT Module N-CH 1200V 800A 5000000mW 10-Pin IHM130-2 Tray
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