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FS225R12KE3BOSA1
FS225R12KE3BOSA1
IGBT Modules FS225R12KE3BOSA1
Infineon
FS225R12KE3BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveUnknown
Part StatusNRND
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)1150000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)325
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 325A 1150000mW Automotive Tray
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