Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FF800R17KE3NOSA1
FF800R17KE3NOSA1
IGBT Modules FF800R17KE3NOSA1
Infineon
FF800R17KE3NOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count10
AutomotiveUnknown
PCB changed10
Part StatusNRND
Channel TypeN
ConfigurationDual Dual Collector Dual Emitter
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)4450000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1150
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 1.15KA 4450000mW Automotive 10-Pin IHM130-2 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13815
Manufacturer: Microchip Technology
Inventory: 0
$0.69541
Manufacturer: Microchip Technology
Inventory: 0
$0.21974
Manufacturer: STMicroelectronics
Inventory: 0
$0.43568
Manufacturer: Texas Instruments
Inventory: 3000
$3.36776
Manufacturer: Texas Instruments
Inventory: 0
$0.02555
Manufacturer: Texas Instruments
Inventory: 3000
$1.31986
Manufacturer: Texas Instruments
Inventory: 6000
$1.0644
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51252
Manufacturer: ADI
Inventory: 0
$1.40371