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FD800R17HP4KB2BOSA1
FD800R17HP4KB2BOSA1
IGBT Modules FD800R17HP4KB2BOSA1
Infineon
FD800R17HP4KB2BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width130
Package Length140
Maximum Power Dissipation (mW)5350000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)800
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Module N-CH 1700V 800A 5350000mW 7-Pin Tray
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