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FP15R12KE3GBOSA1
FP15R12KE3GBOSA1
IGBT Modules FP15R12KE3GBOSA1
Infineon
FP15R12KE3GBOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count24
AutomotiveNo
PCB changed24
Part StatusNRND
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-5
Maximum Power Dissipation (mW)100000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)25
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 25A 100000mW 24-Pin ECONO2-5 Tray
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