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FP15R12W1T4B11BOMA1
FP15R12W1T4B11BOMA1
IGBT Modules FP15R12W1T4B11BOMA1
Infineon
FP15R12W1T4B11BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
PCB changed23
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-2
Standard Package NameAG-EASY1B-2
Maximum Power Dissipation (mW)130000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)28
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-2 Tray
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