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FP50R07N2E4B11BOSA1
FP50R07N2E4B11BOSA1
IGBT Modules FP50R07N2E4B11BOSA1
Infineon
FP50R07N2E4B11BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count31
AutomotiveNo
PCB changed31
Part StatusNRND
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-4
Maximum Power Dissipation (mW)190000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)70
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 650V 70A 190000mW 31-Pin ECONO2-4 Tray
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