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FF900R12IP4
FF900R12IP4
IGBT Modules FF900R12IP4
Infineon
FF900R12IP4
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Diodes, Transistors and Thyristors
IGBT Modules
FF900R12IP4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count8
AutomotiveNo
PCB changed8
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Package Width89
Package Height38
Package Length172
Supplier PackagePRIME2-1
Standard Package NamePRIME2
Maximum Power Dissipation (mW)5100000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)900
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 900A 5100000mW 8-Pin PRIME2-1 Tray
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