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FP50R07N2E4BOSA1
FP50R07N2E4BOSA1
IGBT Modules FP50R07N2E4BOSA1
Infineon
FP50R07N2E4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
TechnologyField Stop|Trench
Part StatusNRND
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)190000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)70
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 650V 70A 190000mW Tray
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