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FZ1200R45KL3B5NOSA1
FZ1200R45KL3B5NOSA1
IGBT Modules FZ1200R45KL3B5NOSA1
Infineon
FZ1200R45KL3B5NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveUnknown
PCB changed9
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width140
Package Length190
Supplier PackageA-IHV190-4
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-50
Maximum Collector-Emitter Voltage (V)4500
Maximum Continuous Collector Current (A)1200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 4500V 1.2KA Automotive 9-Pin A-IHV190-4 Tray
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