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FP50R07U1E4BPSA1
FP50R07U1E4BPSA1
IGBT Modules FP50R07U1E4BPSA1
Infineon
FP50R07U1E4BPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
PCB changed23
Part StatusObsolete
Channel TypeN
ConfigurationHex
Package Width44
Package Height19
Package Length69.5
Supplier PackageSMART1-1
Maximum Power Dissipation (mW)230000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 650V 75A 230000mW 23-Pin SMART1-1 Tray
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