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IGBT Modules FZ2400R17KF6CB2NOSA1
Infineon
FZ2400R17KF6CB2NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count9
AutomotiveNo
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple
Package Width140
Package Height38
Package Length190
Supplier PackageIHM190-1
Maximum Power Dissipation (mW)18000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)3800
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Module N-CH 1700V 3.8KA 18000000mW 9-Pin IHM190-1
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