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FS200R12KT4R
FS200R12KT4R
IGBT Modules FS200R12KT4R
Infineon
FS200R12KT4R
--
Diodes, Transistors and Thyristors
IGBT Modules
FS200R12KT4R.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count35
AutomotiveNo
PCB changed35
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)1000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)280
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 280A 1000000mW 35-Pin ECONO3-4 Tray
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