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FS450R17OE4BOSA1
FS450R17OE4BOSA1
IGBT Modules FS450R17OE4BOSA1
Infineon
FS450R17OE4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count29
AutomotiveNo
TechnologyField Stop|Trench
PCB changed29
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width152
Package Height17
Package Length164
Supplier PackageECONOPP-2
Maximum Power Dissipation (mW)2400000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)630
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 1700V 630A 2400000mW 29-Pin ECONOPP-2 Tray
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