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VS-GT50TP60N
VS-GT50TP60N
IGBT Modules VS-GT50TP60N
Vishay
VS-GT50TP60N
--
Diodes, Transistors and Thyristors
IGBT Modules
VS-GT50TP60N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width35
Package Height30
Package Length94
Supplier PackageINT-A-PAK
Standard Package NameINT-A-PAK
Maximum Power Dissipation (mW)208000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)85
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 600V 85A 208000mW 7-Pin INT-A-PAK
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