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FS75R12KE3
FS75R12KE3
IGBT Modules FS75R12KE3
Infineon
FS75R12KE3
--
Diodes, Transistors and Thyristors
IGBT Modules
FS75R12KE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count28
AutomotiveNo
PCB changed28
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-6
Standard Package NameECONO 2
Maximum Power Dissipation (mW)350000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)105
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 105A 350000mW 28-Pin ECONO2-6 Tray
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