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FZ400R12KS4HOSA1
FZ400R12KS4HOSA1
IGBT Modules FZ400R12KS4HOSA1
Infineon
FZ400R12KS4HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveUnknown
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width61.4
Package Length106.4
Supplier Package62MM-2
Maximum Power Dissipation (mW)2500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)510
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 510A 2500000mW Automotive 4-Pin 62MM-2 Tray
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