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FS800R07A2E3B31BOSA1
FS800R07A2E3B31BOSA1
IGBT Modules FS800R07A2E3B31BOSA1
Infineon
FS800R07A2E3B31BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveYes
TechnologyField Stop|Trench
PCB changed33
Part StatusObsolete
Channel TypeN
ConfigurationHex
Package Width100
Package Height28.5(Max)
Package Length216
Supplier PackageHYBRID2-1
Maximum Power Dissipation (mW)1550000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)700
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 650V 700A 1550000mW Automotive 33-Pin HYBRID2-1 Tray
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