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FS820R08A6P2B
FS820R08A6P2B
IGBT Modules FS820R08A6P2B
Infineon
FS820R08A6P2B
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveYes
PCB changed33
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width100.5
Package Length154.5
Maximum Power Dissipation (mW)714000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)750
Maximum Continuous Collector Current (A)450
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 750V 450A 714000mW Automotive 33-Pin Tray
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