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VS-GB600AH120N
VS-GB600AH120N
IGBT Modules VS-GB600AH120N
Vishay
VS-GB600AH120N
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width61.4
Package Length106.4
Supplier PackageDouble INT-A-PAK
Maximum Power Dissipation (mW)3125
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)910
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 1200V 910A 3125mW 4-Pin Double INT-A-PAK
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