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FZ1200R33HE3BPSA1
FZ1200R33HE3BPSA1
IGBT Modules FZ1200R33HE3BPSA1
Infineon
FZ1200R33HE3BPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)3A228C
PackagingTray
AutomotiveNo
Part StatusNRND
Channel TypeN
ConfigurationTriple
Maximum Power Dissipation (mW)11000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-50
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)1200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.7
Description
Trans IGBT Module N-CH 3300V 1.2KA 11000mW Automotive Tray
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