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IGBT Modules FZ1200R33KF2C
Infineon
FZ1200R33KF2C
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Screw |
| ECCN (US) | 3A228.c |
| Packaging | Tray |
| Pin Count | 9 |
| Automotive | No |
| PCB changed | 9 |
| Part Status | LTB |
| Channel Type | N |
| Configuration | Triple Common Emitter Common Gate |
| Package Width | 140 |
| Package Height | 38 |
| Package Length | 190 |
| Supplier Package | IHV190-3 |
| Standard Package Name | IHV190 |
| Maximum Power Dissipation (mW) | 14500000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 3300 |
| Maximum Continuous Collector Current (A) | 2000 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Typical Collector Emitter Saturation Voltage (V) | 3.4 |
| Description |
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