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FZ1500R33HE3BPSA1
FZ1500R33HE3BPSA1
IGBT Modules FZ1500R33HE3BPSA1
Infineon
FZ1500R33HE3BPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count9
AutomotiveNo
PCB changed9
Part StatusActive
Channel TypeN
ConfigurationTriple
Package Width140
Package Height38
Package Length190
Supplier PackageIHVB190-3
Maximum Power Dissipation (mW)17000000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-50
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)1500
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.55
Description
Trans IGBT Module N-CH 3300V 1.5KA 17000000mW 9-Pin IHVB190-3 Tray
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