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FZ400R12KE3B1HOSA1
FZ400R12KE3B1HOSA1
IGBT Modules FZ400R12KE3B1HOSA1
Infineon
FZ400R12KE3B1HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Collector Dual Emitter
Package Width61.4
Package Height36.5
Package Length106.4
Supplier Package62MM-2
Maximum Power Dissipation (mW)2250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)650
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 650A 2250000mW 5-Pin 62MM-2 Tray
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