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F4-75R06W1E3
F4-75R06W1E3
IGBT Modules F4-75R06W1E3
Infineon
F4-75R06W1E3
--
Diodes, Transistors and Thyristors
IGBT Modules
F4-75R06W1E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count18
AutomotiveNo
PCB changed18
Part StatusUnconfirmed
Channel TypeN
ConfigurationQuad
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-1
Standard Package NameEASY1B
Maximum Power Dissipation (mW)275000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 600V 100A 275000mW 18-Pin EASY1B-1 Tray
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