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FZ400R33KL2CB5NOSA1
FZ400R33KL2CB5NOSA1
IGBT Modules FZ400R33KL2CB5NOSA1
Infineon
FZ400R33KL2CB5NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)3A228.c
PackagingTray
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Collector Dual Emitter
Package Width73
Package Height48
Package Length140
Supplier PackageIHV73-6
Maximum Power Dissipation (mW)4900000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)750
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Module N-CH 3300V 750A 4900000mW Automotive 5-Pin IHV73-6 Tray
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