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IGBT Modules FF401R17KF6CB2NOSA1
Infineon
FF401R17KF6CB2NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count10
AutomotiveNo
PCB changed10
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width73
Package Height38
Package Length140
Supplier PackageIHM73-1
Maximum Power Dissipation (mW)3150000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)650
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Module N-CH 1700V 650A 3150000mW 10-Pin IHM73-1
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