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FZ600R17KE3HOSA1
FZ600R17KE3HOSA1
IGBT Modules FZ600R17KE3HOSA1
Infineon
FZ600R17KE3HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
TechnologyTrench|Field Stop
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width61.4
Package Height36.5
Package Length106.4
Supplier Package62MM-2
Maximum Power Dissipation (mW)3150000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)840
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 840A 3150000mW 4-Pin 62MM-2 Tray
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