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IGBT Modules FZ600R65KF1
Infineon
FZ600R65KF1
--
Diodes, Transistors and Thyristors
IGBT Modules
FZ600R65KF1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count9
AutomotiveNo
PCB changed9
Part StatusObsolete
Channel TypeN
ConfigurationTriple Common Emitter Common Gate
Package Width140
Package Height48
Package Length190
Supplier PackageIHV190-3
Standard Package NameIHM
Maximum Power Dissipation (mW)11400000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)6300
Maximum Continuous Collector Current (A)1200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)4.3
Description
Trans IGBT Module N-CH 6300V 1.2KA 11400000mW 9-Pin IHV190-3
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