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FZ800R33KF2CNOSA1
FZ800R33KF2CNOSA1
IGBT Modules FZ800R33KF2CNOSA1
Infineon
FZ800R33KF2CNOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
ECCN (US)3A228.c
PackagingTray
AutomotiveUnknown
Part StatusLTB
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)9600
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)1300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 1.3KA 9600mW Automotive Tray
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