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IGBT Modules NXH50C120L2C2ES1G
onsemi
NXH50C120L2C2ES1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 26 |
| Automotive | No |
| PCB changed | 26 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Hex |
| Package Width | 40.2 |
| Package Height | 8 |
| Package Length | 73.2 |
| Supplier Package | DIP |
| Maximum Power Dissipation (mW) | 20(Typ) |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 50 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Typical Collector Emitter Saturation Voltage (V) | 1.8 |
| Description |
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