Welcome to BEAM! Tel: +86-553-5896615
Language: Help
FF650R17IE4BOSA1
FF650R17IE4BOSA1
IGBT Modules FF650R17IE4BOSA1
Infineon
FF650R17IE4BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count10
AutomotiveUnknown
PCB changed10
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width89
Package Height37.7
Package Length172
Supplier PackagePRIME2-1
Maximum Power Dissipation (mW)4150000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)930
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 930A 4150000mW Automotive 10-Pin PRIME2-1 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95479
Manufacturer: Microchip Technology
Inventory: 0
$0.69311
Manufacturer: Microchip Technology
Inventory: 4000
$2.4485
Manufacturer: STMicroelectronics
Inventory: 5880
$0.6722
Manufacturer: Texas Instruments
Inventory: 3000
$3.35661
Manufacturer: Texas Instruments
Inventory: 2500
$0.14385
Manufacturer: Texas Instruments
Inventory: 3000
$1.31549
Manufacturer: Texas Instruments
Inventory: 6000
$1.06088
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50089
Manufacturer: ADI
Inventory: 0
$1.39906