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NXH50M65L4C2ESG
NXH50M65L4C2ESG
IGBT Modules NXH50M65L4C2ESG
onsemi
NXH50M65L4C2ESG
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel TypeN
ConfigurationHex
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Module N-CH 650V 50A Tube
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