Welcome to BEAM! Tel: +86-553-5896615
Language: Help
NXH50M65L4C2SG
NXH50M65L4C2SG
IGBT Modules NXH50M65L4C2SG
onsemi
NXH50M65L4C2SG
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel TypeN
ConfigurationHex
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Module N-CH 650V 50A Tube
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95756
Manufacturer: Microchip Technology
Inventory: 0
$0.69511
Manufacturer: Microchip Technology
Inventory: 4000
$2.4556
Manufacturer: STMicroelectronics
Inventory: 5880
$0.72774
Manufacturer: Texas Instruments
Inventory: 3000
$3.36634
Manufacturer: Texas Instruments
Inventory: 2500
$0.14427
Manufacturer: Texas Instruments
Inventory: 3000
$1.3193
Manufacturer: Texas Instruments
Inventory: 6000
$1.06395
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51104
Manufacturer: ADI
Inventory: 0
$1.40312