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FPF2G120BF07ASP
FPF2G120BF07ASP
IGBT Modules FPF2G120BF07ASP
onsemi
FPF2G120BF07ASP
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
TechnologyField Stop
Part StatusObsolete
Channel TypeN
ConfigurationTriple
Maximum Power Dissipation (mW)156000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)40
Maximum Gate Emitter Leakage Current (uA)2
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 650V 40A 156000mW Tray
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