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VS-GB100TP120N
VS-GB100TP120N
IGBT Modules VS-GB100TP120N
Vishay
VS-GB100TP120N
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Height29.5
Package Length94.1
Supplier PackageINT-A-PAK
Maximum Power Dissipation (mW)650000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 1200V 200A 650000mW 7-Pin INT-A-PAK
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