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BSM35GB120DN2HOSA1
BSM35GB120DN2HOSA1
IGBT Modules BSM35GB120DN2HOSA1
Infineon
BSM35GB120DN2HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Height30.5
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)280000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.15
Typical Collector Emitter Saturation Voltage (V)2.7
Description
Trans IGBT Module N-CH 1200V 50A 280000mW 7-Pin 34MM-1 Tray
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