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VS-GB150TH120N
VS-GB150TH120N
IGBT Modules VS-GB150TH120N
Vishay
VS-GB150TH120N
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Supplier PackageDouble INT-A-PAK
Maximum Power Dissipation (mW)1008
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)300
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 1200V 300A 1008mW 7-Pin Double INT-A-PAK
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